Method of depositing material
US9951417B2 · kind B2 · utility
0Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2014 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Oct 6, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.