Method for preparing structured graphene on SiC substrate based on Cl2 reaction

US9951418B2 · kind B2 · utility

Assignee

• Xidian University · CN

Inventors

• Hui Guo · Xi'an, CN
• Keji Zhang · Xi'an, CN
• Yuming Zhang · Nicholasville, US
• Pengfei Deng · Nanhu, CN
• Tianmin Lei · Xi'an, CN
• Fengqi Zhang · Gaorihan, CN

Key dates

• Filing date: Dec 31, 2012
• Grant date: Apr 24, 2018
• Expiry date: Jul 18, 2034

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C01B32/188
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

Disclosed is a method for preparing structured graphene on a SiC substrate on the basis of Cl2 reaction, the procedures are as follows: firstly, performing standard cleaning to a SiC sample chip; depositing a layer of SiO2 on the surface of the SiC sample chip and engraving a figure window on the SiO2 layer; then arranging the windowed sample chip in a quartz tube, introducing a mixed gas of Ar and Cl2 into the quartz tube, reacting the bare SiC with Cl2 for 3-8 min at 700-1100° C. to generate a carbon film; arranging the generated carbon film in Ar gas, annealing for 10-30 min at 1000-1200° C. to generate the structured graphene on the window on the carbon film. The method is simple and safe; the generated structured graphene has a smooth surface and low porosity and can be used for making microelectronic devices.