Semiconductor device and method for fabricating the same
US9953685B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2014 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Oct 24, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/64
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes a substrate, a memory device, and a select transistor. The memory device is located on the substrate. The select transistor is located on the substrate and electrically connected to the memory device. The select transistor includes a select gate, a first dielectric layer, and a second dielectric layer. The select gate is located on the substrate. The first dielectric layer is adjacent to the second dielectric layer, and located between the select gate and the substrate. The first dielectric layer is closer to the memory device than the second dielectric layer. The thickness of the first dielectric layer is greater than the thickness of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.