Damage free enhancement of dopant diffusion into a substrate
US9953835B2 · kind B2 · utility
1Cited by
1References
18Claims
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Key dates
| Filing date | Jan 23, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jan 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.