Semiconductor device and method of fabricating the same
US9953841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2015 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jul 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed on the substrate. A first passivation material layer is formed on sidewalls of the opening and on the substrate. A treatment process is performed to the first passivation material layer to form a second passivation material layer. A first surface of the second passivation material layer and a second surface (at an inner side) of the second passivation material layer are differ in a property, and the first surface is located at a side of the second passivation material layer relatively away from the material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.