Patent · US Active

Platen for reducing particle contamination on a substrate and a method thereof

US9953849B2 · kind B2 · utility

0Cited by
0References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 2014
Grant dateApr 24, 2018
Priority date
Expiry dateDec 7, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/6875
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Techniques for reducing particle contamination on a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a platen having different regions, where the pressure levels in the regions may be substantially equal. For example, the platen may comprise a platen body comprising first and second recesses, the first recess defining a fluid region for holding fluid for maintaining a temperature of the substrate at a desired temperature, the second recess defining a first cavity for holding a ground circuit; a first via defined in the platen body, the first via having first and second openings, the first opening proximate to the fluid region and the second opening proximate to the first cavity, wherein pressure level of the fluid region may be maintained at a level that is substantially equal to pressure level of the first cavity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.