Patent · US Active

Semiconductor device and manufacturing method thereof

US9953894B2 · kind B2 · utility

0Cited by
1References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 1, 2017
Grant dateApr 24, 2018
Priority date
Expiry dateMar 1, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device including: a semiconductor element, a substrate having a first surface on which the semiconductor element is provided, and a second surface located opposite the first surface, a metal species provided on the second surface, and a plated metal portion provided at least in part on the second surface on the metal species. The semiconductor device further includes a first region where the plated metal portion is provided and a second region where the plated metal portion is not provided are alternately arranged at a peripheral portion of the second surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.