Methods of depositing cobalt manganese films
US9953926B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jan 8, 2015 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jan 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are semiconductor devices and methods of making semiconductor devices with a barrier layer comprising cobalt and manganese nitride. Also described are semiconductor devices and methods of making same with a barrier layer comprising CoMn(N) and, optionally, an adhesion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.