Patent · US Active

Method for manufacturing a nanowire structure

US9954060B2 · kind B2 · utility

0Cited by
3References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 11, 2016
Grant dateApr 24, 2018
Priority date
Expiry dateMar 11, 2036

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/547
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.