Group III-Nitride compound heterojunction tunnel field-effect transistors and methods for making the same

US9954085B2 · kind B2 · utility

Assignee

• University of Notre Dame du Lac · US

Inventors

• Patrick Fay · Granger, US
• Lina Cao · Daguantang, CN
• Debdeep Jena · Ithaca, US
• Wenjun Li · Beijing, CN

Key dates

• Filing date: Jun 27, 2016
• Grant date: Apr 24, 2018
• Expiry date: Jun 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. These devices employ polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. In one example, the tunnel field-effect transistor device includes a nanowire cylindrical gate-all-around geometry to achieve a high degree of gate electrostatic control.