Inventor · Beijing, CN

Wenjun Li

111Patents
12h-index
151Co-inventors
89Inventor score

Filing activity: May 9, 1996 → Nov 8, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
USD916166S1 IP camera General 46 Active
USD882300S1 L shaped desk General 35 Active
USD735845S1 Dehumidifier General 22 Active
USD972618S1 Network camera General 19 Active
USD979710S1 Handheld shower head General 16 Active
US8193580B2 Shielded gate trench MOSFET device and fabrication Electricity 16 Active
US8431457B2 Method for fabricating a shielded gate trench MOS with improved source pickup layout Electricity 14 Active
USD704320S1 Movable air conditioner General 14 Active
US8236651B2 Shielded gate trench MOSFET device and fabrication Electricity 14 Active
US7322801B2 Compact linear air pump and valve package Mechanical Engineering; Lighting; Heating 14 Expired
USD1019046S1 Bar cart General 12 Active
US8138605B2 Multiple layer barrier metal for device component formed in contact trench Emerging Cross-Sectional Technologies 12 Active
USD950623S1 Network camera General 11 Active
US8779510B2 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts Electricity 11 Active
USD905478S1 Wine rack General 11 Active
US5783797A Laser texturing of magnetic recording medium using a crystal material Physics 10 Expired
US9281368B1 Split-gate trench power MOSFET with protected shield oxide Electricity 10 Active
US9544042B2 Opportunistic mobile receive diversity (OMRD) in a dual-SIM dual-active (DSDA) device Electricity 9 Active
US9961694B2 Dual band communication method and WLAN device Electricity 9 Active
US9905647B2 Group III-nitride compound heterojunction tunnel field-effect transistors and methods for making the same Electricity 8 Active
USD984584S1 Water hose General 8 Active
US9252239B2 Semiconductor power devices manufactured with self-aligned processes and more reliable electrical contacts Electricity 6 Active
USD923975S1 Computer desk General 6 Active
US8994101B2 Shielded gate trench MOS with improved source pickup layout Electricity 5 Active
US10170559B1 Reverse conducting IGBT incorporating epitaxial layer field stop zone and fabrication method Electricity 5 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.