Switching device and method of manufacturing the same
US9954096B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2017 |
| Grant date | Apr 24, 2018 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A switching device includes a semiconductor substrate; a trench; a conductor layer extending in a longitudinal direction of the trench so as to be in contact with a bottom surface of the trench; a bottom insulating layer covering an upper surface of the conductor layer; a gate insulating layer covering a side surface of the trench; and a gate electrode disposed in the trench. The semiconductor substrate includes a first semiconductor region of a first conductivity type, a body region of a second conductivity type, a second semiconductor region of the first conductivity type, a bottom semiconductor region of the second conductivity type extending in the longitudinal direction so as to be in contact with the conductor layer, and a connection semiconductor region of the second conductivity type connected to the body region and to the bottom semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.