Process for fabricating semiconductor nanowires or microwires having insulated roots

US9954141B2 · kind B2 · utility

Assignees

• ALEDIA · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Eric Pourquier · Saint-Égrève, FR
• Philippe Gibert · La Burletière, FR
• Brigitte Martin · Rueil-Malmaison, FR

Key dates

• Filing date: Dec 24, 2015
• Grant date: Apr 24, 2018
• Expiry date: Dec 24, 2035

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.