Patent · US Active

Carbon nanotube-graphene hybrid transparent conductor and field effect transistor

US9954175B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignees

International Business Machines Corporation · US
EGYPT NANOTECHNOLOGY CENTER · EG

Inventors

Ageeth A. Bol · Yorktown Heights, US
Bhupesh Chandra · Jersey City, US
Amal Kasry · White Plains, US
Ahmed Maarouf · Potsdam, US
Glenn J. Martyna · Croton-on-Hudson, US
George S. Tulevski · White Plains, US

Key dates

Filing date	Aug 6, 2015
Grant date	Apr 24, 2018
Priority date	—
Expiry date	Aug 6, 2035

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/30
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.