Epitaxial wafer and method for manufacturing same
US9957641B2 · kind B2 · utility
1Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2015 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Jul 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An epitaxial wafer includes a silicon carbide film having a first main surface. A groove portion is formed in the first main surface. The groove portion extends in one direction along the first main surface. Moreover, a width of the groove portion in the one direction is twice or more as large as a width of the groove portion in a direction perpendicular to the one direction. Moreover, a maximum depth of the groove portion from the first main surface is not more than 10 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.