Patent · US Active

Micromechanical pressure sensor device and corresponding manufacturing method

US9958348B2 · kind B2 · utility

2Cited by
3References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 17, 2014
Grant dateMay 1, 2018
Priority date
Expiry dateNov 17, 2034

Classification

  • Technology area (CPC B)Performing Operations; Transporting
  • CPC primaryB81B2207/012
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A micromechanical pressure sensor device and a corresponding manufacturing method. The micromechanical pressure sensor device includes an ASIC wafer having a front side and a rear side, and a rewiring system, formed on the front side of the ASIC wafer, which includes a plurality of stacked strip conductor levels and insulation layers. The pressure sensor device also includes a MEMS wafer having a front side and a rear side, a first micromechanical functional layer which is formed above the front side of the MEMS wafer, and a second micromechanical functional layer which is formed above the first micromechanical functional layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.