Optoelectronic device with light-emitting diodes comprising at least one zener diode
US9960152B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Nov 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An optoelectronic device is provided, including light-emitting diodes arranged such that: N diodes of said plurality, where N ≥2, are connected in series and are configured to be forward-biased, and at least one diode is connected in parallel to the N diodes and is configured to be reverse-biased and to form a Zener diode, wherein a sum of threshold voltages of the N diodes is less than a breakdown voltage of the Zener diode, and the light-emitting diodes include a stack of semiconductive portions including a first conductivity-type doped portion, a second conductivity-type doped portion opposite the first type, and a first intermediate portion doped according to the first type and being disposed between said first and second portions and having a doping level such that the breakdown voltage is greater than the sum of the threshold voltages of each of the N diodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.