Semiconductor devices including charge storage patterns
US9960171B2 · kind B2 · utility
3Cited by
7References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Aug 24, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
Abstract
Semiconductor devices are provided. A semiconductor device includes a plurality of gate electrodes. The semiconductor device includes a channel structure adjacent the plurality of gate electrodes. The semiconductor device includes a plurality of charge storage segments between the channel structure and the plurality of gate electrodes. Methods of forming semiconductor devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.