Method for manufacturing TFT backplane and structure of TFT backplane

US9960195B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventors

• Wenhui Li · Nanhu, CN
• Yifan Wang · Three Rivers, US
• Chihyu Su · Tangxia, CN
• Xiaowen Lv · Nanhu, CN

Key dates

• Filing date: Aug 15, 2014
• Grant date: May 1, 2018
• Expiry date: Aug 15, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/60

Abstract

The present invention provides method for manufacturing a TFT backplane and a structure of a TFT backplane. The method includes (1) forming a gate terminal (2) and a first metal electrode M1 on a substrate (1); (2) sequentially forming a gate insulation layer (3), a semiconductor layer, and an etch stop layer on the gate terminal (2), the first metal electrode M1, and the substrate (1) in a successive manner and applying a photolithographic operation to form an island-like semiconductor layer (4) and an island-like etch stop layer (5); (3) applying a photolithographic operation to patternize the island-like etch stop layer (5) and the gate insulation layer (3) to form a plurality of etch stop layer vias (51) and a gate insulation layer via (31); (4) forming source/drain terminals (6) and a second metal electrode M2; (5) forming a passivation protection layer (7); (6) forming a planarization layer (8); (7) forming a pixel electrode layer (9); (8) forming a pixel definition layer (10); and (9) forming a spacer pillar (11).