Horizontal nanosheet FETs and methods of manufacturing the same
US9960232B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2016 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Nov 1, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A horizontal nanosheet field effect transistor (hNS FET) including source and drain electrodes, a gate electrode between the source and drain electrodes, a first spacer separating the source electrode from the gate electrode, a second spacer separating the drain electrode from the gate electrode, and a channel region under the gate electrode and extending between the source electrode and the drain electrode. The source electrode and the drain electrode each include an extension region. The extension region of the source electrode is under at least a portion of the first spacer and the extension region of the drain electrode is under at least a portion of the second spacer. The hNS FET also includes at least one layer of crystalline barrier material having a first thickness at the extension regions of the source and drain electrodes and a second thickness less than the first thickness at the channel region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.