Transistor device having protruding portion from channel portion
US9960245B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2017 |
| Grant date | May 1, 2018 |
| Priority date | — |
| Expiry date | Mar 15, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/66
Abstract
A transistor device including a semiconductor material layer, a gate layer, and an insulation layer between the gate layer and the semiconductor material layer is provided. The semiconductor material layer includes a first conductive portion, a second conductive portion, a channel portion between the first conductive portion and the second conductive portion, and a first protruding portion formed integrally. The channel portion has a first boundary adjacent to the first conductive portion, a second boundary adjacent to the second conductive portion, a third boundary, and a fourth boundary. The third boundary and the fourth boundary connect the terminals of the first boundary and the second boundary. The first protruding portion is protruded outwardly from the third boundary of the channel portion. The first gate boundary and the second gate boundary are overlapped with the first boundary and the second boundary of the channel portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.