Resist pattern forming method and developer for lithography
US9964851B2 · kind B2 · utility
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Key dates
| Filing date | Aug 19, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Aug 19, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a resist pattern including forming a resist film on a support using a resist composition; subjecting the resist film to exposure; and forming a resist pattern by developing the resist film having undergone the exposure, in which the developing is performed using a developer which contains a basic compound represented by the following formula (1) and tetrabutylammonium hydroxide, and in which the concentration of tetrabutylammonium hydroxide is equal to or greater than 2.5% by mass and less than 2.8% by mass:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.