Polishing liquid for CMP, polishing liquid set for CMP, and polishing method
US9966269B2 · kind B2 · utility
0Cited by
0References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2015 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention relates to a polishing liquid for CMP containing cerium oxide particles and water, wherein the half-value width of the main peak appearing within a range from 2θ=27.000 to 29.980° in a powder X-ray diffraction chart of the cerium oxide particles is from 0.26 to 0.36°, the average particle size of the cerium oxide particles is at least 130 nm but less than 175 nm, and the number of cerium oxide particles having a particle size of 1.15 μm or greater is 5000×103/mL or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.