Methods of treating nitride films
US9966275B2 · kind B2 · utility
6Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2016 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Dec 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for reducing oxygen content in an oxidized annealed metal nitride film comprising exposing the film to a plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.