Semiconductor device and method of manufacturing semiconductor device having parallel contact holes between adjacent trenches
US9966372B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2015 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Jun 8, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a plurality of trenches provided in an upper surface of a semiconductor substrate; trench electrodes each provided in a corresponding one of the trenches; a first semiconductor layer of a first conductivity type provided in a first range interposed between adjacent ones of the trenches; a second semiconductor layer of a second conductivity type; a third semiconductor layer of the first conductivity type; an interlayer insulation film provided on the upper surface of the semiconductor substrate and including a plurality of contact holes; a first conductor layer provided in each of the contact holes; and a surface electrode provided on the interlayer insulation film and connected to each of the first conductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.