Switching device
US9966460B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2017 |
| Grant date | May 8, 2018 |
| Priority date | — |
| Expiry date | Feb 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A switching device includes a semiconductor substrate having a first element range and an ineffective range. First trenches extend in a first direction across the first element range and the ineffective range. Second trenches are provided in each inter-trench region within the first element range and are not provided within the ineffective range. A gate electrode is disposed in the trenches. No contact hole is provided in an interlayer insulating film within the ineffective range. The first metal layer covers the interlayer insulating film. The insulating protective film covers a portion of the first metal layer on its outer peripheral side within the ineffective range. The second metal region is in contact with the first metal layer within an opening of the insulating protective film, and is in contact with a side surface of the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.