Patent · US Active

Light-emitting device

US9967937B2 · kind B2 · utility

1Cited by

3References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Ivan-Christophe Robin · Grenoble, FR
Hubert Bono · Grenoble, FR

Key dates

Filing date	Oct 24, 2014
Grant date	May 8, 2018
Priority date	—
Expiry date	Oct 24, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/821
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A light-emitting device including a light-emitting diode including an n-doped InGaN layer and a p-doped GaN layer, and an active zone including a number m of InGaN-emitting layers each one arranged between two InGaN barrier layers, of which the indium compositions of the emitting layers are different and are greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer, and of which the indium compositions of the barrier layers are different and which are greater on the side of the n-doped InGaN layer than on the side of the p-doped GaN layer. An electric power supply supplies the diode with a periodic signal. A controller of the power supply can alter the peak value of the periodic signal according to a spectrum of the light emitted.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.