Patent · US Active

Ternary tungsten boride nitride films and methods for forming same

US9969622B2 · kind B2 · utility

11Cited by
13References
15Claims
0Family size

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Key dates

Filing dateJul 23, 2013
Grant dateMay 15, 2018
Priority date—
Expiry dateJul 23, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.