Method for achieving sustained anisotropic crystal growth on the surface of a silicon melt
US9970125B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 2012 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Feb 17, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.