Bipolar junction transistor voltage-drop-based temperature sensors
US9970826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2015 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | May 21, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01K7/01
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Temperature sensors using bipolar junction transistors are provided. Examples of the disclosed sensors minimize effects of IR drop and have improved accuracy. An example temperature sensor includes a first branch coupled between a power supply and ground. The first branch includes a first transistor series-coupled with a second transistor via a first node and has a first temperature sensor output via the first node. The temperature sensor also includes a second branch coupled between the power supply and ground. The second branch includes a third transistor series-coupled with a fourth transistor via a second node and has a second temperature sensor output via the second node. The first through fourth transistors are diode-connected and can have an n-well structure or a deep n-well structure. The temperature sensor also includes a voltage sensor having an input coupled to the first temperature sensor output and the second temperature sensor output.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.