Reading memory cells
US9972383B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jul 27, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F11/108
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A first read operation is performed using a first voltage level to read data from a memory array. An instant bit count corresponding to a number of bits in the data read from the memory array is determined. A recorded bit count corresponding to a number of bits in the data that was written at a time of writing the data to the memory array is accessed. A difference between the instant bit count and the recorded bit count is obtained. Conditioned on determining that the difference is less than or equal to a first threshold value, the data read from the memory array is output using the first read operation. Conditioned on determining that the difference is greater than the first threshold value, a second read operation is performed using a second voltage level that is distinct from the first voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.