Electronic device and method for fabricating the same
US9972384B2 · kind B2 · utility
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1References
20Claims
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Key dates
| Filing date | Apr 14, 2017 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Apr 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/826
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An electronic device comprising a semiconductor memory unit that includes a resistance variable element formed over a substrate, and including stacked therein a bottom electrode, a variable resistance layer and a top electrode, and a barrier layer formed over the resistance variable element, and including an amorphous silicon layer which is doped with at least one kind of impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.