System and method for programming a memory device with multiple writes without an intervening erase
US9972396B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2017 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jun 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In solid-state memory, such as flash memory, a section of memory is typically erased prior to each time data is programmed therein. In contrast, systems and methods for programming a solid-state memory device with writes from different data sets without an intervening erase are disclosed. For example, the memory device may first erase a block and thereafter program the block with a first data set, with some cells in an erased state and other cells in a non-erased state. After programming the first data set into the block and without erasing the block, the memory device programs the block with a second data set that is at least partially different from the first data set. In this regard, some of the cells, which were in a non-erased state after programming with the first data set, are in an erased state after programming with the second data set.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.