Method for manufacturing semiconductor device to facilitate peeling of a supporting substrate bonded to a semiconductor wafer
US9972521B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Sep 3, 2015 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Sep 3, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68386
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A glass substrate is bonded to a front surface of a wafer on which a front surface element structure is formed, with an adhesive layer interposed therebetween. An adhesive layer is formed on the wafer to extend from the front surface of the wafer to a chamfered portion and a side surface of the wafer. The adhesive layer is formed on a first surface of the glass substrate and is not formed on a chamfered portion and a side surface of the glass substrate. After the rear surface of the wafer is ground, a rear surface element structure is formed on the ground rear surface. A laser beam is radiated to the glass substrate and the glass substrate is peeled from the adhesive layer. The adhesive layer is removed and the wafer is cut by dicing. In this way, a chip having a thin semiconductor device formed thereon is completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.