Semiconductor devices
US9972528B2 · kind B2 · utility
3Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Dec 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76826
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a substrate, a first interlayered insulating layer on the substrate having openings, conductive patterns provided in the openings, first to fourth insulating patterns stacked on the substrate provided with the conductive patterns, and a second interlayered insulating layer provided on the fourth insulating pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.