Methods for fabricating semiconductor device
US9972538B2 · kind B2 · utility
0Cited by
10References
17Claims
0Family size
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Key dates
| Filing date | Jun 29, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Jun 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating a semiconductor device include forming a composite film, forming a rough pattern on the composite film, forming a smooth pattern by subjecting the rough pattern to ion implantation and a plasma treatment, and patterning the composite film using the smooth pattern as a first mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.