Metal-ono-vacuum tube charge trap flash (VTCTF) nonvolatile memory and the method for making the same
US9972637B2 · kind B2 · utility
5Cited by
2References
5Claims
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Key dates
| Filing date | Oct 13, 2017 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Oct 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for preparing vacuum tube flash memory structure, to form a vacuum channel in the flash memory, and using oxide-nitride-oxide (ONO) composite materials as gate dielectric layer, wherein the nitride layer serves as a charge-trap layer to provide a blocking insulating between the gate electrode and the vacuum channel. The present structure exhibits superior program and erase speed as well as the retention time. It also provide with excellent gate controllability and negligible gate leakage current due to adoption ONO as the gate dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.