Image sensor with heating effect and related methods
US9972654B2 · kind B2 · utility
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4References
8Claims
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Key dates
| Filing date | Aug 5, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Aug 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor including a semiconductor layer. A light absorber layer couples with the semiconductor layer at a pixel of the image sensor and absorbs incident light to substantially prevent the incident light from entering the semiconductor layer. The light absorber layer heats a depletion region of the semiconductor layer in response to absorbing the incident light, creating electron/hole pairs. The light absorber layer may include one or more narrow bandgap materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.