Semiconductor device and method of forming the same
US9972678B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2016 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Oct 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0151
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device is provided including the following steps. A substrate having a first voltage area and a second voltage area is provided. A first oxide layer is formed in the first voltage area. The first oxide layer is removed to form a recess in the first voltage area. A shallow trench isolation (STI) structure is formed in the substrate, wherein a first portion of the STI structure is located in the first voltage area and a second portion of the STI structure is located in the second voltage area, a top surface of the STI structure is higher than the top surface of the substrate, and a bottom surface of the first portion of the STI structure in the first voltage area is lower than a bottom surface of the second portion of the STI structure in the second voltage area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.