Patent · US Active

Semiconductor device with a termination mesa between a termination structure and a cell field of field electrode structures

US9972714B2 · kind B2 · utility

0Cited by
1References
15Claims
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Assignee

Inventors

Key dates

Filing dateAug 27, 2015
Grant dateMay 15, 2018
Priority date
Expiry dateAug 27, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/112
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a cell field with a plurality of field electrode structures and cell mesas. The field electrode structures are arranged in lines. The cell mesas separate neighboring ones of the field electrode structures from each other. Each field electrode structure includes a field electrode and a field dielectric separating the field electrode from a semiconductor body. A termination structure surrounds the cell field, extends from a first surface into the semiconductor body, and includes a termination electrode and a termination dielectric separating the termination electrode from the semiconductor body. The termination and field dielectrics have the same thickness. A termination mesa, which is wider than the cell mesas, separates the termination structure from the cell field.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.