Semiconductor devices
US9972716B2 · kind B2 · utility
2Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2015 |
| Grant date | May 15, 2018 |
| Priority date | — |
| Expiry date | Aug 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are semiconductor devices that include an active pattern on a substrate, first and second gate electrodes on the active pattern and arranged in a first direction relative to one another and a first source/drain region in a first trench that extends into the active pattern between the first and second gate electrodes. The first source/drain region includes a first epitaxial layer that is configured to fill the first trench and that includes at least one plane defect that originates at a top portion of the first epitaxial layer and extends towards a bottom portion of the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.