Memory device, memory system, and read/verify operation method of the memory device
US9978458B2 · kind B2 · utility
0Cited by
9References
19Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Dec 19, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Dec 19, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/5642
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.