Method of manufacturing semiconductor device including forming a film containing a first element, a second element and carbon, substrate processing apparatus, and recording medium
US9978587B2 · kind B2 · utility
1Cited by
1References
14Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 21, 2015 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Jul 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing supplying a first precursor having chemical bonds between the first elements to a substrate, supplying a second precursor having chemical bonds between the first element and carbon without having the chemical bonds between the first elements to the substrate, and supplying a first reactant containing the second element to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.