Low dishing copper chemical mechanical planarization

US9978609B2 · kind B2 · utility

Assignee

• Versum Materials US, LLC · US

Inventors

• Xiaobo Shi · Chandler, US
• James Allen Schlueter · Phoenix, US
• Joseph D. Rose · Gilbert, US
• Mark Leonard O'Neill · San Marcos, US
• Malcolm Grief · Boise, US

Key dates

• Filing date: Jan 20, 2016
• Grant date: May 22, 2018
• Expiry date: Jan 20, 2036

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C09K3/1463
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

Copper chemical mechanical polishing (CMP) formulation, method and system are disclosed. The CMP formulation comprises particulate materials, at least two or more amino acids, oxidizer, corrosion inhibitor, and rest being water.