Interconnection of semiconductor devices in extreme environment microelectronic integrated circuit chips

US9978686B1 · kind B1 · utility

Assignee

• The United States of America as represented by the Administrator of the National Aeronautics and Space Administration · US

Inventors

• David J. Spry · Medina, US
• Philip G. Neudeck · Berea, US

Key dates

• Filing date: Feb 21, 2017
• Grant date: May 22, 2018
• Expiry date: Feb 21, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/035
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process of fabrication and the resulting integrated circuit device is made of patterned metal electrical interconnections between semiconductor devices residing on and forming extremely harsh environment integrated circuit chips. The process enables more complicated wide band gap semiconductor integrated circuits with more than one level of interconnect to function for prolonged time periods (over 1000 hours) at much higher temperatures (500 C).