Semiconductor devices and methods of manufacturing the same
US9978746B2 · kind B2 · utility
2Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Mar 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
Abstract
Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation structure crossing the active pattern and dividing the active pattern into first and second region. The separation structure may include a first insulating pattern that fills a recess region between the first and second regions. The first insulating pattern may have a concave top surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.