Image sensor
US9978785B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Nov 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
Abstract
An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.