Semiconductor device and method for manufacturing the same
US9978842B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 16, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Apr 9, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a second electrode, a control electrode and an insulating film. The first semiconductor region is of a first conductivity type and includes SiC. The second semiconductor region is provided on the first semiconductor region and has a first surface. The second semiconductor region is of a second conductivity type and includes SiC. The third semiconductor region is provided on the second semiconductor region, is of the first conductivity type and includes SiC. The first and second electrodes are electrically connected to the third semiconductor region. The control electrode is provided on the second semiconductor region. The insulating film is provided between the second semiconductor region and the control electrode. The insulating film contacts the first surface and the control electrode and includes nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.