Semiconductor device and method of fabricating the same
US9978865B2 · kind B2 · utility
1Cited by
16References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | Dec 20, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device includes first source/drain regions disposed at both sides of a first gate structure and including dopants of a first conductivity type, counter regions being in contact with upper portions of the first source/drain regions and under both end portions of the first gate structure, and first halo regions in contact with bottom surfaces of the first source/drain regions. The counter regions include dopants of a second conductivity type that is different from the first conductivity type. The first halo regions include dopants of the second conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.