Semiconductor ultraviolet light emitting device having improved light extraction efficiency
US9978907B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 5, 2016 |
| Grant date | May 22, 2018 |
| Priority date | — |
| Expiry date | May 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A semiconductor ultraviolet light emitting device includes: a substrate; a buffer layer disposed on the substrate and comprising a plurality of nanorods between which a plurality of voids are formed; a first conductive nitride layer disposed on the buffer layer and having a first conductive AlGaN layer; an active layer disposed on the first conductive nitride layer and having a quantum well including AlxInyGa1-x-yN (0≤x+y≤1, 0≤y<0.15); and a second conductive nitride layer disposed on the active layer and having a second conductive AlGaN layer, in which the plurality of nanorods satisfy 3.5≤n(λ)×D/λ≤5.0, where λ represents a wavelength of light generated by the active layer, n(λ) represents a refractive index of the plurality of nanorods at a wavelength of λ, and D represents diameters of the plurality of nanorods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.